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CMPA801B030S Datasheet

Part Number CMPA801B030S
Manufacturers Wolfspeed
Logo Wolfspeed
Description GaN MMIC Power Amplifier
Datasheet CMPA801B030S DatasheetCMPA801B030S Datasheet (PDF)

CMPA801B030S 7.9 - 11.0 GHz, 40 W, Packaged GaN MMIC Power Amplifier Description Cree’s CMPA801B030S is a packaged, 40W HPA utilizing Cree’s high performance, 0.15um GaN on SiC production process. The CMPA801B030S operates from 7.9-11.0 GHz and targets pulsed radar systems supporting both defense and commercial applications. With 2 stages of gain, this high performance amplifier provides 20dB of large signal gain and 40% efficiency to support lower system DC power requirements and simplify syste.

  CMPA801B030S   CMPA801B030S






Part Number CMPA801B030F1
Manufacturers Wolfspeed
Logo Wolfspeed
Description Power Amplifier
Datasheet CMPA801B030S DatasheetCMPA801B030F1 Datasheet (PDF)

CMPA801B030F1 35 W, 8.0 - 12.0 GHz, GaN MMIC, Power Amplifier Description Cree’s CMPA801B030F1 is a packaged, 35 W HPA utilizing Cree’s high performance, 0.15um GaN on SiC production process. The CMPA801B030F1 operates from 8-12 GHz and targets pulsed radar systems supporting both defense and commercial applications. With 2 stages of gain, this high performance amplifier provides 19 dB of large signal gain and 35% efficiency to support lower system DC power requirements and simplify system therm.

  CMPA801B030S   CMPA801B030S







Part Number CMPA801B030F
Manufacturers Wolfspeed
Logo Wolfspeed
Description Power Amplifier
Datasheet CMPA801B030S DatasheetCMPA801B030F Datasheet (PDF)

CMPA801B030F 30 W, 8.0 – 11.0 GHz, GaN MMIC, Power Amplifiers Description Wolfspeed’s CMPA801B030F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors.

  CMPA801B030S   CMPA801B030S







Part Number CMPA801B030D
Manufacturers Wolfspeed
Logo Wolfspeed
Description Power Amplifier
Datasheet CMPA801B030S DatasheetCMPA801B030D Datasheet (PDF)

CMPA801B030D 30 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Description Cree’s CMPA801B030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This .

  CMPA801B030S   CMPA801B030S







GaN MMIC Power Amplifier

CMPA801B030S 7.9 - 11.0 GHz, 40 W, Packaged GaN MMIC Power Amplifier Description Cree’s CMPA801B030S is a packaged, 40W HPA utilizing Cree’s high performance, 0.15um GaN on SiC production process. The CMPA801B030S operates from 7.9-11.0 GHz and targets pulsed radar systems supporting both defense and commercial applications. With 2 stages of gain, this high performance amplifier provides 20dB of large signal gain and 40% efficiency to support lower system DC power requirements and simplify system thermal management solutions. Packaged in a 7x7 mm plastic overmold QFN, the CMPA801B030S also supports reduced board space requirements and high-throughput manufacturing lines. PN: CMPA801B030S Package Type: 7x7 QFN Typical Performance Over 7.9 - 11.0 GHz (TC = 25˚C) Parameter Small Signal Gain Output Power Power Gain Power Added Efficiency 8.0 GHz 28.2 39.3 19.9 38.2 8.5 GHz 27.5 45.9 20.6 40.6 9.0 GHz 27.1 48.9 21.0 41.3 Notes: PIN = 26 dBm, Pulse Width = 100 μs; Duty Cycle = 10% 10.0 GHz 24.6 42.3 20.3 39.4 11.0 GHz 24.0 40.7 20.1 37.0 Units dB W dB % VG1B VD1B VG2B VD2B Features • Freq: 7.9 – 11.0 GHz • Psat: 40 W • PAE: 40% • LS Gain: 20 dB • 7x7 mm Overmold QFN • Lower system costs • Reduced board area Note: Features are typical performance across frequency under 25°C operation. Please reference performance charts for additional details. Applications • Military pulsed radar • Civil pulsed radar • Satellite Communications VG1A VD1A VG2A VD2A Figure 1. Rev 0.1 – .


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