CMT2301
P-CHANNEL ENHANCEMENT MODE MOSFET
GENERAL DESCRIPTION
FEATURES
The CMT2301 is the P-Channel logic enhancement...
CMT2301
P-CHANNEL ENHANCEMENT MODE
MOSFET
GENERAL DESCRIPTION
FEATURES
The CMT2301 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology.
This high density process is especially tailored to minimize
on-state resistance.
These devices are particularly suited for low
voltage
application such as cellular phone and notebook computer
power management and other battery powered circuits, and
low in-line power loss are needed in a very small outline
surface mount package.
-20V/-2.3A ,RDS(ON)=130 mΩ@VGS=-4.5V -20V/-1.9A ,RDS(ON)=190 mΩ@VGS=-2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3 package design
APPLICATIONS
Power Management in Notebook Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
PIN CONFIGURATION
SOT-23-3
Top View
3
SYMBOL
D
G
GATE DRAIN
SOURCE
1
2
ORDERING INFORMATION
Part Number CMT2301M233 CMT2301GM233*
*Note: G : Suffix for Pb Free Product
Package SOT-23-3 SOT-23-3
S P-Channel
MOSFET
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 1
CMT2301
P-CHANNEL ENHANCEMENT MODE
MOSFET
ABSOLUTE MAXIMUM RATINGS
Drain- to- Source
Voltage Gate-to-Source
Voltage
Rating
Continuous Drain Current(TJ=150℃)
Pulsed Drain Current Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperat...
