CMT2N7002

www.DataSheet4U.com Formosa MS FEATURES CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION This N-Channel enhancement mode field effect transistor is produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 115mA DC and can deliver pulsed currents up to 800mA. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Rugged and Reliable High Saturation Current Capability PIN CONFIGURATION SOT-23 SYMBOL D Top View 3 DRAIN SOURCE G GATE 1 2 S N-Channel MOSFET ORDERING INFORMATION Part Number CMT2N7002 CMT2N7002G* *Note: G : Suffix for Pb Free Product Package SOT-23 SOT-23 ABSOLUTE MAXIMUM RATINGS Rating Drain Source Voltage Drain-Gate Voltage (RGS = 1.0MΩ) Drain to Current ¡Ð ¡Ð Continuous Pulsed Continue ¡Ð Total Power Dissipation Derate above 25¢J Single Pulse Drain-to-Source Avalanche Energy ¡Ð Operating and Storage Temperature Range Thermal Resistance ¡Ð Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TJ = 25¢J EAS TJ, TSTG θJA TL (VDD = 50V, VGS = 10V, IAS = 0.8A, L = 30mH, RG = 25Ω) -55 to 150 417 300 ¢J ¢J /W ¢J Non-repetitive Symbol VDSS VD...