Optocoupler. CNY75B Datasheet

CNY75B Datasheet PDF


Part CNY75B
Description Optocoupler
Feature CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Optocoupler, Phototransistor Output, With Base Conne.
Manufacture Vishay Telefunken
Datasheet
Download CNY75B Datasheet


CNY75A/ B/ C/ GA/ GB/ GC Vishay Semiconductors Optocoupler, CNY75B Datasheet
CNY75AX, CNY75BX, CNY75CX, CNY75A, CNY75B, CNY75C OPTICALLY CNY75B Datasheet
CNY75(G) Series Optocoupler with Phototransistor Output Ord CNY75B Datasheet
CNY75AX, CNY75BX, CNY75CX, CNY75A, CNY75B, CNY75C OPTICALLY CNY75BX Datasheet




CNY75B
CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC
Vishay Semiconductors
Optocoupler, Phototransistor Output, with Base Connection
B CE
6 54
17201_4
1 23
A (+) C (-) NC
DVE
18537_5
DESCRIPTION
The CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB,
CNY75GC consists of a phototransistor optically coupled to
a gallium arsenide infrared-emitting diode in a 6 pin plastic
dual inline package.
AGENCY APPROVALS
• UL1577, file no. E52744, double protection
• BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950
(BS 7002), pending
• DIN EN 60747-5-5 (VDE 0884)
• FIMKO (SETI): EN 60950, certificate no. FI25155
FEATURES
• Isolation materials according to UL 94-VO
• Pollution degree 2 (DIN/VDE 0110/resp.
IEC 60664)
• Climatic classification 55/110/21 (IEC 60068
part 1)
• Low temperature coefficient of CTR
• CTR offered in 3 groups
• Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS (848 V peak)
• Rated recurring peak voltage (repetitive)
VIORM = 600 VRMS
• Rated impulse voltage (transient overvoltage)
VIOTM = 6 kVpeak
• Isolation test voltage (partial discharge test voltage)
Vpd = 1.6 kV
• Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI 325
• Thickness through insulation 0.4 mm
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage 300 V
- for appl. class I - III at mains voltage 600 V
according to DIN EN 60747-5-5 (VDE 0884)
ORDER INFORMATION (1)
PART
CNY75A
CNY75B
CNY75C
CNY75GA
CNY75GB
CNY75GC
Note
(1) G = leadform 10.16 mm; G is not marked on the body.
REMARKS
CTR 63 % to 125 %, DIP-6
CTR 100 % to 200 %, DIP-6
CTR 160 % to 320 %, DIP-6
CTR 63 % to 125 %, DIP-6, 400 mil
CTR 100 % to 200 %, DIP-6, 400 mil
CTR 160 % to 320 %, DIP-6, 400 mil
www.vishay.com
254
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83536
Rev. 2.0, 28-Oct-09



CNY75B
CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC
Optocoupler, Phototransistor Output, Vishay Semiconductors
with Base Connection
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
VR 5
V
IF 60 mA
tp 10 µs
IFSM
3
A
Pdiss 70 mW
Tj 125 °C
Collector base voltage
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
COUPLER
tp/T = 0.5, tp 10 ms
VCBO
VCEO
VECO
IC
ICM
Pdiss
Tj
70
70
7
50
100
70
125
V
V
V
mA
mA
mW
°C
AC isolation test voltage (RMS)
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature (2)
2 mm from case, t 10 s
VISO
Ptot
Tamb
Tstg
Tsld
5000
200
- 55 to + 110
- 55 to + 125
260
VRMS
mW
°C
°C
°C
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.
ELECTRICAL CHARACTERISTCS (1)
PARAMETER
INPUT
Forward voltage
Reverse current
Junction capacitance
OUTPUT
Collector base voltage
Collector emitter voltage
Emitter collector voltage
Collector emitter leakage current
COUPLER
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
TEST CONDITION
IF = 50 mA
VR = 6 V
VR = 0 V, f = 1 MHz
IC = 100 µA
IC = 1 mA
IE = 100 µA
VCE = 20 V, IF = 0 A
IF = 10 mA, IC = 1 mA
VCE = 5 V, IF = 10 mA,
RL = 100 Ω
f = 1 MHz
PART SYMBOL MIN.
VF
IR
Cj
VCBO
VCEO
VECO
ICEO
VCEsat
fc
Ck
70
70
7
TYP.
1.25
50
110
0.6
MAX.
1.6
10
150
0.3
UNIT
V
µA
pF
V
V
V
nA
V
kHz
pF
Note
(1) Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Document Number: 83536
Rev. 2.0, 28-Oct-09
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
255






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