PROCESS
Small Signal MOSFET Transistor
N-Channel Enhancement-Mode MOSFET Chip
CP357X
PROCESS DETAILS Die Size Die Thi...
PROCESS
Small Signal
MOSFET Transistor
N-Channel Enhancement-Mode
MOSFET Chip
CP357X
PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 22 x 17 MILS 5.9 MILS 3.9 x 3.9 MILS 14 x 9 MILS Al-Si - 30,000Å Au - 12,000Å
GEOMETRY GROSS DIE PER 6 INCH WAFER 63,570 PRINCIPAL DEVICE TYPE CMLDM3737
R0 (17-November 2010)
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www.DataSheet4U.com
PROCESS
CP357X
Typical Electrical Characteristics
R0 (17-November 2010)
w w w. c e n t r a l s e m i . c o m
www.DataSheet4U.com
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