CPC3708CTR

INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - V(BR)DSX Max On-Resistance - RDS(on) Max Power SOT-89 Package SOT-223 Package Rating 350 14 1.1 2.5 Units V  W Features 350V Drain-to-Source Voltage Depletion Mode Device Offers Low RDS(on) at Cold Temperatures Low On-Resistance: 8 (Typical) @ 25°C Low VGS(off) Voltage High Input Impedance Low Input and Output Leakage Small Package Size SOT-89 and SOT-223 PC Card (PCMCIA) Compatible PCB Space and Cost Savings Applications LED Drive Circuits Telecommunications Normally On Switches Ignition Modules Converters Security Power Supplies Regulators Circuit Symbol D G S CPC3708 350V N-Channel Depletion Mode FET Description The CPC3708 is a N-channel, depletion mode Field Effect Transistor (FET) that is available in an SOT-223 package (CPC3708Z) and an SOT-89 package (CPC3708C). Both utilize IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process that realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device, particularly for use in difficult application environments such as telecommunications, security, and power supplies. CPC3708Z and the CPC3708C have a typical on-resistance of 8 and a drain-to-source voltage of 350V. As with all MOS devices, the FET structure prevents thermal runaway and thermally induced secondary breakdown. Ordering Information Pa...