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Ordering number : ENA0114
CPH3360
SANYO Semiconductors
DATA SHEET
CPH3360
Features
• • •
P-Cha...
www.DataSheet.co.kr
Ordering number : ENA0114
CPH3360
SANYO Semiconductors
DATA SHEET
CPH3360
Features
P-Channel Silicon
MOSFET
General-Purpose Switching Device Applications
ON-resistance RDS(on)1=233mΩ(typ.) 4V drive Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --30 ±20 --1.6 --6.4 0.9 150 --55 to +150 Unit V V A A W °C °C
Package Dimensions
unit : mm (typ) 7015A-004
Product & Package Information
Package : CPH3 JEITA, JEDEC : SC-59, TO-236, SOT-23 Minimum Packing Quantity : 3,000 pcs./reel
2.9 0.6 3
0.15
Packing Type: TL
0.2
Marking
WS
TL
2.8
1.6
0.05
0.6
1 0.95
2 0.4
1 : Gate 2 : Source 3 : Drain SANYO : CPH3
Electrical Connection
3
0.9
0.2
1
2
http://semicon.sanyo.com/en/network
N0211PE TKIM TC-00002659 No. A0114-1/4
Datasheet pdf - http://www.DataSheet4U.net/
LOT No.
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CPH3360
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown
Voltage Zero-Gate
Voltage Drain Current Gate-to-Source Leakage Current Cutoff
Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Tim...