CPH6347

CPH6347 Power MOSFET –20V, 39mΩ, –6A, Single P-Channel www.onsemi.com Features Low Gate Drive Voltage ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS Compliance VDSS −20V RDS(on) Max 39mΩ@ −4.5V 66mΩ@ −2.5V 102mΩ@ −1.8V ID Max −6A Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) VDSS VGSS ID Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) Junction Temperature PD Tj Storage Temperature Tstg Thermal Resistance Ratings Parameter Junction to Ambient When mounted on ceramic substrate (900mm2 × 0.8mm) Symbol RθJA Value −20 ±12 −6 −24 Unit V V A A 1.6 150 −55 to +150 W °C °C Value Unit 78.1 °C/W Electrical Connection P-Channel 1, 2, 5, 6 1 : Drain 3 2 : Drain 3 : Gate 4 : Source 5 : Drain 4 6 : Drain Packing Type : TL Marking TL Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. YZ LOT No. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 March 2015 - Rev. 2 1 Publication Order Number : CPH6347/D Electrical Characteristics at Ta = 25°C Parameter Symbol Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current ...