CPH6443

CPH6443 Power MOSFET 35V, 37mΩ, 6A, Single N-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features Low On-Resistance 4V drive ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance Typical Applications DC/DC Converter Current Balance Switch for Backlight SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS 35 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 6 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP 24 A Power Dissipation When mounted on ceramic substrate (1200mm2 × 0.8mm) Junction Temperature PD Tj 1.6 W 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Junction to Ambient When mounted on ceramic substrate (1200mm2 × 0.8mm) Symbol RθJA Value Unit 78.1 °C/W www.onsemi.com VDSS 35V RDS(on) Max 37mΩ@ 10V 61mΩ@ 4.5V 73mΩ@ 4V ID Max 6A ELECTRICAL CONNECTION N-Channel 1, 2, 5, 6 1 : Drain 2 : Drain 3 3 : Gate 4 : Source 5 : Drain 6 : Drain 4 PACKING TYPE : TL M...