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CS10J65FA9 Datasheet

Part Number CS10J65FA9
Manufacturers HUAJING MICROELECTRONICS
Logo HUAJING MICROELECTRONICS
Description Silicon N-Channel Power MOSFET
Datasheet CS10J65FA9 DatasheetCS10J65FA9 Datasheet (PDF)

Silicon N-Channel Power MOSFET CS10J65F A9 ○R General Description: CS10J65F A9, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package type is TO-220F, which accords with the RoHS standard. Features: l Fast Switching l Low Gate Charge l Low Rever.

  CS10J65FA9   CS10J65FA9






Part Number CS10J65FA9-G
Manufacturers HUAJING MICROELECTRONICS
Logo HUAJING MICROELECTRONICS
Description Silicon N-Channel Power MOSFET
Datasheet CS10J65FA9 DatasheetCS10J65FA9-G Datasheet (PDF)

Silicon N-Channel Power MOSFET CS10J65F A9-G ○R General Description: CS10J65F A9-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-220F, which accords with the RoHS standard. VDSS ID PD(TC=25℃) RDS(ON)max Features: l Fast Sw.

  CS10J65FA9   CS10J65FA9







Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS10J65F A9 ○R General Description: CS10J65F A9, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package type is TO-220F, which accords with the RoHS standard. Features: l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications: l Power switch circuit of adaptor and charger. VDSS ID PD(TC=25℃) RDS(ON)max Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ,Tstg Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Power Dissipation Operating Junction and Storage Temperature Range Rating 650 10 30 ±30 50 32.


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