MOSFET. CS13N50A8D Datasheet

CS13N50A8D Datasheet PDF

Part CS13N50A8D
Description Silicon N-Channel Power MOSFET
Feature CS13N50A8D; Silicon N-Channel Power MOSFET CS13N50 A8D ○R General Description: CS13N50 A8D, the silicon N-cha.
Manufacture Huajing Microelectronics
Datasheet
Download CS13N50A8D Datasheet




CS13N50A8D
Silicon N-Channel Power MOSFET
CS13N50 A8D
R
General Description
CS13N50 A8D, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. The package form
is TO-220AB, which accords with the RoHS standard.
Features
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data:40nC)
l Low Reverse transfer capacitances(Typical:17pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
VESD(G-S)
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
VDSS
ID
PD (TC=25)
RDS(ON)Typ
500
13
125
0.4
Rating
500
13
10
52
±30
900
80
4.0
5.0
125
1
4000
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
V
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 1 of 1 0 2 015V01



CS13N50A8D
CS13N50 A8D
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 500V, VGS= 0V,
Ta = 25
VDS =400V, VGS= 0V,
Ta = 125
VGS =+20V
VGS =-20V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=6.5A
VDS = VGS, ID = 250µA
Dynamic Characteristics
Symbol
Parameter
gfs Forward Trans conductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VDS=15V, ID =6.5A
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =13A VDD = 250V
VGS = 10V RG = 4.7
ID =13A VDD =250V
VGS = 10V
Rating
Min. Typ. Max.
500 -- --
-- 0.5 --
-- -- 1
-- -- 100
Units
V
V/
µA
-- -- 10 µA
-- -- -10 µA
Rating
Min. Typ. Max.
-- 0.4 0.5
2.0 4.0
Units
V
Rating
Min. Typ. Max.
-- 13 --
-- 1560 --
-- 160 --
-- 17 --
Units
S
pF
Rating
Min. Typ. Max.
-- 13 --
-- 16 --
-- 40 --
-- 17 --
-- 40
-- 8 --
-- 16 --
Units
ns
nC
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 2 of 1 0 2 015V01



CS13N50A8D
CS13N50 A8D
R
Source-Drain Diode Characteristics
Symbol
Parameter
IS Continuous Source Current (Body Diode)
ISM Maximum Pulsed Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Pulse width tp300µs,δ≤2%
Test Conditions
IS=13A,VGS=0V
IS=13A,Tj = 25°C
dIF/dt=100A/us,
VGS=0V
Rating
Min. Typ. Max.
-- -- 13
-- -- 52
-- -- 1.5
-- 262 --
-- 1727 --
Units
A
A
V
ns
nC
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
1
100
Units
/W
/W
Gate-source Zener diode
Symbol
Parameter
Rating
Test Conditions
Min. Typ. Max.
VGSO
Gate-source breakdown voltage
IGS= ±1mA(Open Drain) 30
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the
usage of external components.
Units
V
a1Repetitive rating; pulse width limited by maximum junction temperature
a2L=10.0mH, ID=13.4A, Start TJ=25
a3ISD =13A,di/dt 100A/us,VDDBVDS, Start TJ=25
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD. Pag e 3 of 1 0 2 015V01







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