MOSFET. CS14N10A3 Datasheet

CS14N10A3 Datasheet PDF

Part CS14N10A3
Description Silicon N-Channel Power MOSFET
Feature CS14N10A3; Silicon N-Channel Power MOSFET CS14N10 A3 ○R General Description: CS14N10 A3, the silicon N-channe.
Manufacture Huajing Microelectronics
Datasheet
Download CS14N10A3 Datasheet




CS14N10A3
Silicon N-Channel Power MOSFET
CS14N10 A3
R
General Description
CS14N10 A3, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the high density Trench
technology which reduce the conduction loss, improve switching
VDSS
ID
PD
RDS(ON)Typ
performance and enhance the avalanche energy. This device is
suitable for use as a load switch and PWM applications. The
package form is TO-251, which accords with the RoHS standard.
Features
l Fast Switching
l Low ON Resistance(Rdson150 m)
l Low Gate Charge
l Low Reverse transfer capacitances
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
100 V
14 A
43.1 W
113 m
AbsoluteTC= 25unless otherwise specified
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
IAS a2
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Avalanche Energy
Avalanche Current
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
Rating
100
14.0
8.2
56
±20
28.8
7.6
43.1
0.34
15055 to 150
300
Units
V
A
A
A
V
mJ
A
W
W/
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O. , LTD. Pag e 1 of 9
2017V01



CS14N10A3
CS14N10 A3
Electrical CharacteristicsTJ= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
VDS = 100V, VGS= 0V,
Ta = 25
VDS =80V, VGS= 0V,
Ta = 125
VGS=20V
VGS =-20V
ON Characteristics
Symbol
Parameter
RDS(ON)
Drain-to-Source On-Resistance
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
Test Conditions
VGS=10V,ID=4A
VGS=4.5V,ID=3A
VDS = VGS, ID = 250µA
R
Rating
Min. Typ. Max.
100 -- --
-- -- 1
-- -- 100
-- -- 100
-- -- -100
Units
V
µA
nA
nA
Rating
Min. Typ. Max.
-- 113 150
-- 135 190
1.8 2.4 2.9
Units
m
m
V
Dynamic Characteristics
Symbol
Parameter
Rg Gate resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Test Conditions
VGS=0V, VDS=0V, f=1MHz
VGS = 0V VDS =50V
f = 1.0MHz
Rating
Min. Typ. Max.
-- 3.4 --
-- 556.5 --
-- 34.7 --
-- 18.7 --
Units
pF
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg(4.5V)
Qg(10V)
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VGS=10VRG=3Ω
VDD=50VID=4A
Vdd=50VId=4A
VGS=10V
Rating
Units
Min. Typ. Max.
-- 8.5 --
-- 6.3 --
-- 29.2 --
ns
-- 3.2 --
-- 5.8 --
-- 11.5 --
-- 2.2 --
nC
-- 2.6 --
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O. , LTD. Pag e 2 of 9
2017V01



CS14N10A3
CS14N10 A3
R
Source-Drain Diode Characteristics
Symbol
Parameter
IS Continuous Source Current (Body Diode)
ISM Maximum Pulsed Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Pulse width tp300µs,δ≤2%
Test
Conditions
IS=4.0A,VGS=0V
IS=4.0A,Tj = 25°C
dIF/dt=100A/us,
VGS=0V
Rating
Min. Typ. Max.
-- -- 14
-- -- 56
-- -- 1.5
-- 59.2 --
-- 107.7 --
Units
A
A
V
ns
nC
Symbol
RθJC
RθJA
Parameter
Junction-to-Csae
Junction-to-Ambient
Max.
2.9
60
Units
/W
/W
a1Repetitive rating; pulse width limited by maximum junction temperature
a2L=1.0mH, ID=7.6A, Start TJ=25
WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O. , LTD. Pag e 3 of 9
2017V01







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