MOSFET. CS150N95 Datasheet

CS150N95 Datasheet PDF

Part CS150N95
Description N-Channel Trench Power MOSFET
Feature CS150N95; N-Channel Trench Power MOSFET General Description The CS150N95 is N-channel MOS Field Effect Transis.
Manufacture CASS
Datasheet
Download CS150N95 Datasheet




CS150N95
N-Channel Trench Power MOSFET
General Description
The CS150N95 is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged EAS
capability and ultra low RDS(ON) is suitable for PWM, load
switching especially for E-Bike controller applications.
Features
VDS=150V; ID=104A@ VGS=10V;
RDS(ON)<14.0mΩ @ VGS=10V
Special Designed for E-Bike Controller Application
Ultra Low On-Resistance
High UIS and UIS 100% Test
Application
96V E-Bike controller applications
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
CS150N95
To-220 Top View
Schematic Diagram
VDS = 150V
ID= 104A
RDS(ON)= 9.3mΩ
Package Marking and Ordering Information
Device Marking
Device
Device Package
CS150N95
CS150N95
TO-220
Reel Size
-
Table 1. Absolute Maximum Ratings (TA=25)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID (DC)
ID (DC)
IDM (pluse)
Drain Current (DC) at Tc=25
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
dv/dt
Peak Diode Recovery Voltage
PD Maximum Power Dissipation(Tc=25)
Derating Factor
EAS Single Pulse Avalanche Energy (Note 2)
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25,VDD=50V,VG=10V, RG=25Ω
Tape width
-
Quantity
-
Value
150
±25
104
73
416
7
348
2.33
1600
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/
mJ
CASS SEMICONDUCTOR CO., LTD
-1-
http://www.casssemi.com V3.0



CS150N95
CS150N95
Table 2. Thermal Characteristic
Symbol
Parameter
RJC
Thermal Resistance,Junction-to-Case
Value
---
Max
0.43
Unit
/W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Symbol
Parameter
Conditions
Min
On/Off States
BVDSS
IDSS
IDSS
IGSS
VGS(th)
RDS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS=0V ID=250μA
VDS=150V,VGS=0V
VDS=150V,VGS=0V
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=40A
150
3
Dynamic Characteristics
Typ
9.3
Max Unit
1
10
±100
5
14.0
V
μA
μA
nA
V
gFS Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Switching Times
td(on)
Turn-on Delay Time
tr Turn-on Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Source-Drain Diode Characteristics
VDS=10V,ID=15A
VDS=25V,VGS=0V
f=1.0MHz
VDS=50V,ID=40A
VGS=10V
20
9152
944
133
274
56
113
VDD=65V,ID=40A,RL=15Ω
VGS=10V,RG=2.5Ω
40
72
103
35
S
PF
PF
PF
nC
nC
nC
nS
nS
nS
nS
ISD Source-Drain Current(Body Diode)
104 A
ISDM Pulsed Source-Drain Current(Body Diode)
VSD Forward On Voltage(Note 1)
trr Reverse Recovery Time(Note 1)
Qrr Reverse Recovery Charge(Note 1)
TJ=25,ISD=40A,VGS=0V
TJ=25,IF=40A
di/dt=100A/μs
416 A
0.85 0.99
V
80 nS
200 nC
ton Forward Turn-on Time
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting TJ=25
CASS SEMICONDUCTOR CO., LTD
-2-
http://www.casssemi.com V3.0



CS150N95
Test Circuit
1) EAS Test Circuits
2) Gate Charge Test Circuit:
3) Switch Time Test Circuit
CS150N95
CASS SEMICONDUCTOR CO., LTD
-3-
http://www.casssemi.com V3.0







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