MOSFET. CS16N65A8H Datasheet

CS16N65A8H Datasheet PDF

Part CS16N65A8H
Description Silicon N-Channel Power MOSFET
Feature CS16N65A8H; Silicon N-Channel Power MOSFET CS16N65 A8H ○R General Description: CS16N65 A8H, the silicon N-chan.
Manufacture Huajing Microelectronics
Datasheet
Download CS16N65A8H Datasheet




CS16N65A8H
Silicon N-Channel Power MOSFET
CS16N65 A8H
R
General Description
CS16N65 A8H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
VDSS
ID
PD(TC=25)
RDS(ON)Typ
650
16
180
0.49
performance and enhance the avalanche energy. The transistor can
be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard..
Features
l Fast Switching
l Low ON Resistance(Rdson0.55)
l Low Gate Charge (Typical Data:54nC)
l Low Reverse transfer capacitances(Typical: 18.5pF)
l 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
AbsoluteTc= 25unless otherwise specified):
Symbol Parameter
Rating
VDSS
ID
IDMa1
VGS
EAS a2
dv/dt a3
PD
TJTstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
650
16
11.5
64
±30
800
5.0
180
1.44
15055 to 150
300
V
A
W
Units
V
A
A
A
V
mJ
V/ns
W
W/
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS16N65A8H
CS16N65 A8H
R
Electrical CharacteristicsTc= 25unless otherwise specified):
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSS
ΔBVDSS/ΔTJ
IDSS
IGSS(F)
IGSS(R)
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
VGS=0V, ID=250µA
ID=250uA,Reference25
VDS = 650V, VGS= 0V,
Ta = 25
VDS =520V, VGS= 0V,
Ta = 125
VGS= 30V
VGS =-30V
ON Characteristics
Symbol
Parameter
Test Conditions
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
Pulse width tp300µs,δ≤2%
VGS=10V,ID=8A
VDS = VGS, ID = 250µA
Rating
Min. Typ. Max.
650 --
--
-- 0.65 --
-- -- 10
100
-- -- 100
-- -- -100
Units
V
V/
µA
nA
nA
Rating
Min. Typ. Max.
-- 0.49 0.55
2.0 -- 4.0
Units
V
Dynamic Characteristics
Symbol
Parameter
gfs Forward Trans conductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller)Charge
Test Conditions
VDS=15V, ID =8A
VGS = 0V VDS = 25V
f = 1.0MHz
Test Conditions
ID =16A VDD = 325V
RG = 25
ID =16A VDD =325V
VGS = 10V
Rating
Min. Typ. Max.
-- 15 --
-- 2450
-- 218
-- 18.5
Units
S
pF
Rating
Min. Typ. Max.
-- 30
-- 70
-- 145
-- 74
-- 54
-- 10 --
-- 21 --
Units
ns
nC
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 2 of 10 2017V01



CS16N65A8H
CS16N65 A8H
R
Source-Drain Diode Characteristics
Symbol
Parameter
IS Continuous Source Current (Body Diode)
ISM Maximum Pulsed Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Pulse width tp300µs,δ≤2%
Test Conditions
IS=16A,VGS=0V
IS=16A,Tj = 25°C
dIF/dt=100A/us,
VGS=0V
Rating
Min. Typ. Max.
-- -- 16
-- -- 64
-- -- 1.5
-- 410
--
-- 3.5 --
Units
A
A
V
ns
µC
Symbol
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
0.7
62.5
Units
/W
/W
a1Repetitive rating; pulse width limited by maximum junction temperature
a2L=10mH, ID=12.6A, Start TJ=25
a3ISD =16A,di/dt 200A/us,VDDBVDSS, Start TJ=25
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 3 of 10 2017V01







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