BR2N60(CS2N60)
N-CHANNEL MOSFET/N MOS
: DC/DC 。 Purpose: These devices are well suited for high efficiency switchin...
BR2N60(CS2N60)
N-CHANNEL
MOSFET/N MOS
: DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters
and switch mode power supplies. : ,,。 Features: Low gate charge, low crss, fast switching.
/Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VDSS 600 V
ID(Tc=25℃)
2.0 A
ID(Tc=100℃)
1.3 A
IDM 6.0 A
VGSS
±30
V
EAS 120 mJ
EAR 5.4 mJ
IAR 2.0 A
PD(Tc=25℃)
54 W
TJ,TSTG
-55 to 150 ℃
/Electrical Characteristics(Ta=25℃)
Symbol
Test Conditions
BVDSS
VGS=0V
ID=250μA
IDSS
VDS=600V VDS=480V
VGS=0V TC=125℃
IGSS VGS=±30V VDS=0V
VGS(th)
VDS=VGS
ID=250μA
RDS(on)
VGS=10V
ID=1.0A
gFS
VDS=40V
ID=1.0A
VSD
VGS=0V
IS=2.0A
Ciss
Coss VDS=25V VGS=0V f=1.0MHz
Crss
td(on)
tr td(off)
VDD=300V ID=2.0A RG=25Ω
tf
...
