MOSFET. CS48N18 Datasheet

CS48N18 Datasheet PDF

Part CS48N18
Description N-Channel Trench Power MOSFET
Feature CS48N18; N-Channel Trench Power MOSFET General Description The CS48N18 is N-channel MOS Field Effect Transist.
Manufacture CASS
Datasheet
Download CS48N18 Datasheet




CS48N18
N-Channel Trench Power MOSFET
General Description
The CS48N18 is N-channel MOS Field Effect Transistor
designed for high current switching applications. Rugged EAS
capability and ultra low RDS(ON) is suitable for PWM, load
switching especially for E-Bike controller applications.
Features
VDS=70VID=158A@ VGS=10V
RDS(ON)<4.0mΩ @ VGS=10V
Special Designed for E-Bike Controller Application
Ultra Low On-Resistance
High UIS and UIS 100% Test
Application
48V E-Bike Controller Applications
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
CS48N18
To-220 Top View
Schematic Diagram
VDSS = 70V
IDSS = 158A
RDS(ON) = 3.3mΩ
Package Marking and Ordering Information
Device Marking
Device
Device Package
CS48N18
48N18
TO-220
Reel Size
-
Table 1. Absolute Maximum Ratings (TA=25)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V
VGS Gate-Source Voltage (VDS=0V)
ID (DC)
ID (DC)
IDM (pluse)
Drain Current (DC) at Tc=25
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
dv/dt
Peak Diode Recovery Voltage
PD Maximum Power Dissipation(Tc=25)
Derating Factor
EAS Single Pulse Avalanche Energy (Note 2)
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25,VDD=33V,VG=10V
Tape width
-
Quantity
-
Value
70
±25
158
110
632
7.5
230
1.54
1300
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/
mJ
CASS SEMICONDUCTOR CO., LTD
-1-
http://www.casssemi.com V3.0



CS48N18
Table 2. Thermal Characteristic
Symbol
Parameter
RJC
Thermal Resistance,Junction-to-Case
Value
---
CS48N18
Max
0.65
Unit
/W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Symbol
Parameter
Conditions
On/Off States
BVDSS
IDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
VGS=0V ID=250μA
VDS=68V,VGS=0V
VDS=68V,VGS=0V
IGSS Gate-Body Leakage Current
VGS=±25V,VDS=0V
VGS(th) Gate Threshold Voltage
VDS=VGS,ID=250μA
RDS(ON) Drain-Source On-State Resistance
VGS=10V, ID=40A
Min
70
2
Typ
3.3
Max
1
1
±100
4
4.0
Unit
V
μA
μA
nA
V
Dynamic Characteristics
gFS Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Switching Times
td(on)
Turn-on Delay Time
tr Turn-on Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Source-Drain Diode Characteristics
VDS=10V,ID=40A
VDS=25V,VGS=0V,
f=1.0MHz
VDS=30V,ID=30A,
VGS=10V
22
5489
710
206
186
37
97
VDD=30V,ID=2A,RL=15Ω
VGS=10V,RG=2.5Ω
30
37
78
36
S
pF
pF
pF
nC
nC
nC
nS
nS
nS
nS
ISD Source-Drain Current(Body Diode)
158 A
ISDM Pulsed Source-Drain Current(Body Diode)
VSD Forward on Voltage(Note 1)
trr Reverse Recovery Time(Note 1)
Qrr Reverse Recovery Charge(Note 1)
TJ=25,ISD=40A,VGS=0V
TJ=25,IF=75A
di/dt=100A/μs
632
0.82 0.99
33
45
A
V
nS
nC
ton Forward Turn-on Time
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, RG=25Ω, Starting TJ=25
CASS SEMICONDUCTOR CO., LTD
-2-
http://www.casssemi.com V3.0



CS48N18
Test Circuit
1EAS Test Circuits
2Gate charge Test Circuit:
3Switch Time Test Circuit
CS48N18
CASS SEMICONDUCTOR CO., LTD
-3-
http://www.casssemi.com V3.0







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