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CSB1370 Transistor Datasheet PDF

PNP Silicon Epitaxial Power Transistor

PNP Silicon Epitaxial Power Transistor

 

 

 

Part Number CSB1370
Description PNP Silicon Epitaxial Power Transistor
Feature Continental Device India Limited An IS/I SO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.
2 IS / IECQC 700000 IS / IECQC 750100 PNP S ILICON EPITAXIAL POWER TRANSISTOR CSB1 370 (9AW) TO-220 MARKING : AS BELOW De signed For AF Power Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTIO N SYMBOL VCBO Collector -Base Voltage V CEO Collector -Emitter Voltage VEBO Emi tter- Base Voltage IC Collector Current ICP Peak PC Power Dissipation @ Ta=25 deg C Power Dissipation @ Tc=25 deg C T j Junction Temperature Tstg Storage Tem perature Range ELECTRICAL CHARACTERISTI CS (Ta=25 deg .
Manufacture Continental Device
Datasheet
Download CSB1370 Datasheet

CSB1370

 

 

 


 

 

 

Part Number CSB1370E
Description Power Transistors
Feature RECTRON SEMICONDUCTOR TECHNICAL SPECIFIC ATION See Below for Part # TO-220 - P ower Transistors and Darlingtons TO-22 0 4 12 3 Pin Config 1.
Base 2.
Collec tor 3.
Emitter 4.
Collector Dimensions in millimeters Electrical Characterist ics (Ta=25oC) Part # Polarity VCBO VC EO VEBO (V) (V) (V) Min Min Min PD (W) IC (A) ICES @ VCE hFE hFE @ IC (uA) (A) Max Min Max VCE (V) VCE (SAT) (V) Max VBE (SAT) @ (V) Max IC (A) fT @ IC (MHz) (mA) Min 2N5294 NPN 80 70 7 36 4 5004 50 30 120 0.
5 4 1.
0 0.
5 0.
8 200 2N5296 NPN 60 40 5 36 4 5004 50 3 0 120 1.
0 4 1.
0 1.
0 0.
8 200 2N5298 N PN 80 60 5 36 .
Manufacture RECTRON
Datasheet
Download CSB1370E Datasheet

CSB1370E

 

 

 


 

 

 

Part Number CSB1370
Description PNP Silicon Epitaxial Power Transistor
Feature Continental Device India Limited An IS/I SO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.
2 IS / IECQC 700000 IS / IECQC 750100 PNP S ILICON EPITAXIAL POWER TRANSISTOR CSB1 370 (9AW) TO-220 MARKING : AS BELOW De signed For AF Power Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTIO N SYMBOL VCBO Collector -Base Voltage V CEO Collector -Emitter Voltage VEBO Emi tter- Base Voltage IC Collector Current ICP Peak PC Power Dissipation @ Ta=25 deg C Power Dissipation @ Tc=25 deg C T j Junction Temperature Tstg Storage Tem perature Range ELECTRICAL CHARACTERISTI CS (Ta=25 deg .
Manufacture Continental Device
Datasheet
Download CSB1370 Datasheet

CSB1370

 

 

 

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