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CSB1370 Transistor Datasheet PDFPNP Silicon Epitaxial Power Transistor PNP Silicon Epitaxial Power Transistor |
| Part Number | CSB1370 |
|---|---|
| Description | PNP Silicon Epitaxial Power Transistor |
| Feature | Continental Device India Limited
An IS/I SO 9002 and IECQ Certified Manufacturer
IS/ISO 9002 Lic# QSC/L- 000019. 2 IS / IECQC 700000 IS / IECQC 750100 PNP S ILICON EPITAXIAL POWER TRANSISTOR CSB1 370 (9AW) TO-220 MARKING : AS BELOW De signed For AF Power Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTIO N SYMBOL VCBO Collector -Base Voltage V CEO Collector -Emitter Voltage VEBO Emi tter- Base Voltage IC Collector Current ICP Peak PC Power Dissipation @ Ta=25 deg C Power Dissipation @ Tc=25 deg C T j Junction Temperature Tstg Storage Tem perature Range ELECTRICAL CHARACTERISTI CS (Ta=25 deg . |
| Manufacture | Continental Device |
| Datasheet |
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| Part Number | CSB1370E |
|---|---|
| Description | Power Transistors |
| Feature | RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFIC ATION
See Below for
Part #
TO-220 - P ower Transistors and Darlingtons
TO-22 0
4
12 3
Pin Config 1. Base 2. Collec tor 3. Emitter 4. Collector Dimensions in millimeters Electrical Characterist ics (Ta=25oC) Part # Polarity VCBO VC EO VEBO (V) (V) (V) Min Min Min PD (W) IC (A) ICES @ VCE hFE hFE @ IC (uA) (A) Max Min Max VCE (V) VCE (SAT) (V) Max VBE (SAT) @ (V) Max IC (A) fT @ IC (MHz) (mA) Min 2N5294 NPN 80 70 7 36 4 5004 50 30 120 0. 5 4 1. 0 0. 5 0. 8 200 2N5296 NPN 60 40 5 36 4 5004 50 3 0 120 1. 0 4 1. 0 1. 0 0. 8 200 2N5298 N PN 80 60 5 36 . |
| Manufacture | RECTRON |
| Datasheet |
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| Part Number | CSB1370 |
|---|---|
| Description | PNP Silicon Epitaxial Power Transistor |
| Feature | Continental Device India Limited
An IS/I SO 9002 and IECQ Certified Manufacturer
IS/ISO 9002 Lic# QSC/L- 000019. 2 IS / IECQC 700000 IS / IECQC 750100 PNP S ILICON EPITAXIAL POWER TRANSISTOR CSB1 370 (9AW) TO-220 MARKING : AS BELOW De signed For AF Power Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTIO N SYMBOL VCBO Collector -Base Voltage V CEO Collector -Emitter Voltage VEBO Emi tter- Base Voltage IC Collector Current ICP Peak PC Power Dissipation @ Ta=25 deg C Power Dissipation @ Tc=25 deg C T j Junction Temperature Tstg Storage Tem perature Range ELECTRICAL CHARACTERISTI CS (Ta=25 deg . |
| Manufacture | Continental Device |
| Datasheet |
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