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Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON EPITAXI...
www.DataSheet4U.com
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON EPITAXIAL POWER TRANSISTOR
CSC3255 TO-220
High-Speed Switching Applications. Complementary CSA1291
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VALUE VCBO 80 Collector -Base
Voltage VCEO 60 Collector -Emitter
Voltage VEBO 5.0 Emitter Base
Voltage IC 10.0 Collector Current ICP 12.0 Peak 40.0 Collector Power Dissipation @ Tc=25 deg C PC Tj 150 Junction Temperature Tstg -55 to +150 Storage Temperature Range DataSheet4U.com Specified) ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless DESCRIPTION SYMBOL TEST CONDITION MIN TYP VCEO IC=1mA, IB=0 60 Collector Emitter
Voltage VCBO IC=1mA, IE=0 80 Collector Base
Voltage VEBO IE=1mA, IC=0 5.0 Emitter Base
Voltage ICBO VCB=40V, IE=0 Collector Cut off Current IEBO VBE=4V,IC=0 Emitter Cut off Current VCE(Sat) IC=5A, IB=0.25A Collector Emitter Saturation
Voltage hFE IC=1A, VCE=2V 70 DC Current Gain Dynamic Characteristics ft VCE=5V, IC=1A, 100 Transition Frequency Switching Time ton VCC=20V, VBE=5V 0.1 Turn on time tstg IB1=1B2=.0.25A, IC=5A, 0.5 Storage time tf Pw=20us, Duty Cycle=1% 0.1 Fall time hFE Classification Q : 70 -140 ; R : 100 - 200 ; S : 160 - 250 ; UNIT V V V A A W deg C deg C MAX 100 100 0.6 250 -
DataShee UNIT V V V uA uA V
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TO-220 Plastic Package
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