CSD13202Q2

Product Folder Order Now Technical Documents Tools & Software Support & Community CSD13202Q2 SLPS313A – SEPTEMBER 2013 – REVISED JANUARY 2018 CSD13202Q2 12-V N-Channel NexFET™ Power MOSFETs 1 Features 1 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Lead-Free Terminal Plating RoHS Compliant Halogen Free SON 2-mm × 2-mm Plastic Package Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VAUE 12 5.1 0.76 VGS = 2.5 V 9.1 VGS = 4.5 V 7.5 0.8 UNIT V nC nC mΩ V 2 Applications Optimized for Load Switch Applications Storage, Tablets, and Handheld Devices Optimized for Control FET Applications Point of Load Synchronous Buck Converters 3 Description This 12-V, 7.5-mΩ NexFET™ power MOSFET has been designed to minimize losses in power conversion and load management applications. The SON 2 × 2 offers excellent thermal performance for the size of the package. Top View D1 D D2 6D 5D G3 S 4S DEVICE CSD13202Q2 Device Information MEDIA QTY PACKAGE 7-Inch Reel 3000 SON 2.00-mm × 2.00-mm Plastic Package SHIP Tape and Reel Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limit) ID Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction, TSTG Storage T...