CSD16321Q5

N-Channel www.DataSheet4U.com CSD16321Q5 Features  Optimized for 5V gate drive  Ultra Low Qg & Qgd  Low Thermal Resistance  Avalanche Rated  Pb Free Terminal Plating  RoHS Compliant CICLON NexFET™ Power MOSFETs Product Summary VDS 25 14 2.5 VGS = 3.0V RDS(on) Vth VGS = 4.5V VGS = 8.0V 1.1 2.8 2.1 1.9 V nC nC m m m V G S S S D D D D S 1 S 2 S 3 G 4 D 8 D 7 D 6 D 5 D Qg Qgd QFN 5mm x 6mm Plastic Package Top View Maximum Values (TA = 25oC unless otherwise stated) Symbol VDS VGS ID Drain to Source Voltage Gate to Source Voltage Continuous Drain Current, TC = 25°C Continuous Drain Current1 IDM PD TJ, TSTG EAS 1. 2. Pulsed Drain Current, TA = 25°C2 Power Dissipation1 Operating Junction and Storage Temperature Range Avalanche Energy, single pulse ID =66A, L = 0.1mH, RG = 25Ω 0 2 Parameter Value 25 +10 / -6 100 31 200 3.1 -55 to 150 218 Units V V A A A W °C mJ RθJA = 39 C/W on 1in Cu (2 oz.) on 0.060” thick FR4 PCB. See Figure 10 RDS(ON) vs. VGS 6 ID = 25A RDS(on) - On Resistance (m  ) 5 Gate Charge 10 9 8 TC = 125ºC TC = 25ºC V DS = 12.5V ID = 25A Gate Voltage (V) 10 4 3 2 1 0 0 1 2 3 V GS 4 5 6 7 - Gate to Source Voltage (V) 7 6 5 4 3 2 1 0 8 9 0 5 10 15 20 Qg - Gate Charge (nC) 25 30 35 Ordering Information Type CSD16321Q5 Package QFN 5X6 Plastic Package Package Media 13 inch reel Qty 2500 Ship Tape and Reel © 2008 CICLON Semiconductor Device Corp., rev 2.0 All rights reserved. Confidential and proprietary information. Do not distribu...