CSD16325Q5
www.ti.com
SLPS218C – AUGUST 2009 – REVISED APRIL 2010
N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16325Q5
FEATURES
1
•2 Optimized for 5V Gate Drive • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
• Optimized for Synchronous FET Applications
DESCRIPTION
The NexFET™ power M.
N-Channel Power MOSFET
CSD16325Q5
www.ti.com
SLPS218C – AUGUST 2009 – REVISED APRIL 2010
N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16325Q5
FEATURES
1
•2 Optimized for 5V Gate Drive • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package
APPLICATIONS
• Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
• Optimized for Synchronous FET Applications
DESCRIPTION
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
Top View
S1
8D
S2
7D
S3
D G4
6D
5D
P0094-01
VDS Qg Qgd
RDS(on)
VGS(th)
PRODUCT SUMMARY
Drain to Source Voltage
25
Gate Charge Total (4.5V)
18
Gate Charge Gate to Drain
3.5
Drain to Source On Resistance Threshold Voltage
VGS = 3V VGS = 4.5V VGS = 8V
1.1
V nC nC 2.1 mΩ 1.7 mΩ 1.5 mΩ V
ORDERING INFORMATION
Device
Package
Media Qty
CSD16325Q5
SON 5-mm × 6-mm Plastic Package
13-Inch Reel
2500
Ship
Tape and Reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Continuous Drain Current, TC = 25°C Continuous Drain Current(1)
IDM Pulsed Drain Current, TA = 25°C(2)
PD
Power Dissipation(1)
TJ, Operating Junction and Storage TSTG Temperature Range
EAS
Avalanche Energy, single pulse ID = 100A, L = 0.1mH, RG = 25Ω
VALUE 25
+10 / –8 100 33 200 3.1
UNIT V V A A A W
–55 to 15.