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CSD16325Q5 Datasheet

Part Number CSD16325Q5
Manufacturers Texas Instruments
Logo Texas Instruments
Description N-Channel Power MOSFET
Datasheet CSD16325Q5 DatasheetCSD16325Q5 Datasheet (PDF)

CSD16325Q5 www.ti.com SLPS218C – AUGUST 2009 – REVISED APRIL 2010 N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16325Q5 FEATURES 1 •2 Optimized for 5V Gate Drive • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package APPLICATIONS • Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems • Optimized for Synchronous FET Applications DESCRIPTION The NexFET™ power M.

  CSD16325Q5   CSD16325Q5






N-Channel Power MOSFET

CSD16325Q5 www.ti.com SLPS218C – AUGUST 2009 – REVISED APRIL 2010 N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16325Q5 FEATURES 1 •2 Optimized for 5V Gate Drive • Ultralow Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package APPLICATIONS • Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems • Optimized for Synchronous FET Applications DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0094-01 VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 25 Gate Charge Total (4.5V) 18 Gate Charge Gate to Drain 3.5 Drain to Source On Resistance Threshold Voltage VGS = 3V VGS = 4.5V VGS = 8V 1.1 V nC nC 2.1 mΩ 1.7 mΩ 1.5 mΩ V ORDERING INFORMATION Device Package Media Qty CSD16325Q5 SON 5-mm × 6-mm Plastic Package 13-Inch Reel 2500 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction and Storage TSTG Temperature Range EAS Avalanche Energy, single pulse ID = 100A, L = 0.1mH, RG = 25Ω VALUE 25 +10 / –8 100 33 200 3.1 UNIT V V A A A W –55 to 15.


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