CSD16403Q5A

N-Channel CICLON NexFET™ Power MOSFETs CSD16403Q5A Features Ultra Low Qg & Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating G S S S D D D D S1 S2 S3 G4 D 8D 7D 6D 5D RoHS Compliant Halogen Free QFN 5mm x 6mm Plastic Package Top View Product Summary VDS Qg Qgd RDS(on) Vth 25 13.3 3.5 VGS=4.5V VGS=10V 1.6 2.9 2.2 V nC nC mΩ mΩ V Maximum Values (TA = 25oC unless otherwise stated) Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Continuous Drain Current, TC = 25°C ID Continuous Drain Current1 IDM Pulsed Drain Current, TA = 25°C2 PD Power Dissipation1 TJ, TSTG Operating Junction and Storage Temperature Range EAS Avalanche Energy, single pulse ID =67A, L = 0.1mH, RG = 25Ω 1. Rθja = 410C/W on 1in2 Cu FR4 PCB. 2. Pulse width ≤300 µs, duty cycle ≤ 2% RDS(ON) vs. VGS 10.0 8.0 ID = 20A Gate Charge 12 VDS = 12.5V 10 ID = 20A TC = 125ºC 8 6.0 TC = 25ºC 6 4.0 4 2.0 2 Value 25 +16 / -12 100 28 184 3.1 -55 to 150 224 Units V V A A A W °C mJ RDS(on) - On Resistance (m Ω ) Gate Voltage (V) 0.0 0 2 4 6 8 10 VGS - Gate to Source Voltage (V) Ordering Information 12 Type CSD16403Q5A Package QFN 5X6 Plastic Package © 2008 CICLON Semiconductor Device Corp., rev 2.4 All rights reserved. 0 0 3 6 9 12 15 18 21 24 27 30 33 Qg - Gate Charge (nC) Package Media 13 inch reel Qty 2500 Ship Tape and Reel www.ciclonsemi.com N-Channel CICLON NexFET™ Power MOSFETs CSD16403Q5A Electrical Characteristics (TA ...