CSD16411Q3

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD16411Q3 SLPS206B – AUGUST 2009 – REVISED NOVEMBER 2016 CSD16411Q3 25-V N-Channel NexFET™ Power MOSFET 1 Features 1 Ultra-Low Qg and Qgd Low-Thermal Resistance Avalanche Rated Lead-Free Terminal Plating RoHS Compliant Halogen Free SON 3.3-mm × 3.3-mm Plastic Package 2 Applications Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems Optimized for Control FET Applications 3 Description This 25-V, 8-mΩ, 3.3-mm × 3.3-mm SON NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 25 2.9 0.7 VGS = 4.5 V 12 VGS = 10 V 8 2 UNIT V nC nC mΩ V DEVICE CSD16411Q3 CSD16411Q3T Device Information(1) QTY MEDIA PACKAGE 2500 13-Inch Reel 250 SON 3.30-mm × 3.30-mm Plastic Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limited) VALUE 25 +16 / –12 60 UNIT V V ID Continuous Drain Current (Silicon Limited), TC = 25°C 50 A Continuous Drain Current(1) 14 IDM Pulsed Drain Current, TA ...