CSD16412Q5A

CSD16412Q5A www.ti.com SLPS207A – AUGUST 2009 – REVISED SEPTEMBER 2010 N-Channel NexFET™ Power MOSFETs Check for Samples: CSD16412Q5A FEATURES 1 2 Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5mm x 6mm Plastic Package APPLICATIONS Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems Optimized for Control FET Applications DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 6D VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 25 Gate Charge Total (4.5V) 2.9 Gate Charge Gate to Drain 0.7 Drain to Source On Resistance Threshold Voltage VGS = 4.5V VGS = 10V 2 V nC nC 13 mΩ 9 mΩ V ORDERING INFORMATION Device Package Media Qty CSD16412Q5A SON 5 × 6 Plastic Package 13-inch reel 2500 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction and Storage TSTG Temperature Range EAS Avalanche Energy, single pulse ID = 17A, L = 0.1mH, RG = 25Ω VALUE 25 +16 / –12 52 14 91 3 UNIT V V A A A W –55 to 150 °C 14 mJ (1) RθJA = 42°C/W on 1in2 Cu (2 oz) on 0.060" thick FR4 PCB. (2) Pulse width ≤3...