CSD16413Q5A

CSD16413Q5A www.ti.com SLPS199A – AUGUST 2009 – REVISED APRIL 2010 N-Channel NexFET™ Power MOSFET Check for Samples: CSD16413Q5A FEATURES 1 2 Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5mm × 6mm Plastic Package APPLICATIONS Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom and Computing Systems Optimized for Control or Synchronous FET Applications DESCRIPTION The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0093-01 VDS Qg Qgd RDS(on) VGS(th) PRODUCT SUMMARY Drain to Source Voltage 25 Gate Charge Total (4.5V) 9 Gate Charge Gate to Drain 2.5 Drain to Source On Resistance Threshold Voltage VGS = 4.5V VGS = 10V 1.6 V nC nC 4.1 mΩ 3.1 mΩ V ORDERING INFORMATION Device Package Media Qty CSD16413Q5A SON 5 × 6 Plastic Package 13-inch reel 2500 Ship Tape and Reel ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VDS Drain to Source Voltage VGS Gate to Source Voltage ID Continuous Drain Current, TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction and Storage TSTG Temperature Range EAS Avalanche Energy, single pulse ID = 46A, L = 0.1mH, RG = 25Ω VALUE 25 +16 / –12 100 24 156 3.1 UNIT V V A A A W –55 to 150 °C 106 mJ (1) RqJA = 41°C/W on 1in2 Cu (2 oz.) on 0....