CSD18502KCS

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD18502KCS SLPS367B – AUGUST 2012 – REVISED JULY 2014 CSD18502KCS 40-V N-Channel NexFET™ Power MOSFET 1 Features 1 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package 2 Applications DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control 3 Description This 2.4 mΩ, 40 V, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Drain (Pin 2) Gate (Pin 1) Source (Pin 3) Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 40 52 8.4 VGS = 4.5 V 3.3 VGS = 10 V 2.4 1.8 UNIT V nC nC mΩ mΩ V Device CSD18502KCS Ordering Information(1) Package Media Qty TO-220 Plastic Package Tube 50 Ship Tube (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) VALUE 40 ±20 100 UNIT V V Continuous Drain Current (Silicon limited), ID TC = 25°C 212 A Continuous Drain Current (Silicon limited), TC = 100°C 150 IDM Pulsed Drain Current (1) 400 A PD Power Dissipation 259 W TJ, Operating Junction and Tstg Storage Tem...