CSD18502Q5B

Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design CSD18502Q5B SLPS320B – NOVEMBER 2012 – REVISED MAY 2017 CSD18502Q5B 40 V N-Channel NexFET™ Power MOSFET 1 Features 1 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb-Free Terminal Plating RoHS Compliant Halogen-Free SON 5 mm × 6 mm Plastic Package 2 Applications DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control Product Summary TA = 25°C VDS Drain to source voltage Qg Gate charge total (4.5 V) Qgd Gate charge gate to drain RDS(on) Drain to source on resistance VGS(th) Threshold voltage TYPICAL VALUE 40 25 8.4 VGS = 4.5 V 2.5 VGS = 10 V 1.8 1.8 UNIT V nC nC mΩ mΩ V DEVICE CSD18502Q5B CSD18502Q5BT Ordering Information(1) QTY MEDIA PACKAGE SHIP 2500 13-Inch Reel SON 5 mm × 6 mm Tape and 250 7-Inch Reel Plastic Package Reel (1) For all available packages, see the orderable addendum at the end of the datasheet. 3 Description This 40-V, 1.8-mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0093-01 Absolute Maximum Ratings TA = 25°C VDS Drain to source voltage VGS Gate to source voltage Continuous drain current (package limited) VALUE 40 ±20 100 UNIT V V ID Continuous drain current (silicon limited), TC = 25°C 204 A Continuous drain current(1) 26 IDM Pulsed drain current(2) Power dis...