CSD18503Q5A

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design CSD18503Q5A SLPS358C – JUNE 2012 – REVISED JUNE 2015 CSD18503Q5A 40 V N-Channel NexFET™ Power MOSFET 1 Features 1 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5 mm × 6 mm Plastic Package 2 Applications DC-DC Conversion Secondary Side Synchronous Rectifier Battery Motor Control Product Summary TA = 25°C VDS Drain-to-source voltage Qg Gate charge total (4.5 V) Qgd Gate charge gate-to-drain RDS(on) Drain-to-source on-resistance VGS(th) Threshold voltage TYPICAL VALUE 40 13 4.3 VGS = 4.5 V 4.7 VGS = 10 V 3.4 1.8 UNIT V nC nC mΩ mΩ V Ordering Information(1) DEVICE QTY MEDIA PACKAGE CSD18503Q5A 2500 13-Inch Reel SON 5 mm × 6 mm CSD18503Q5AT 250 7-Inch Reel Plastic Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. 3 Description This 40 V, 3.4 mΩ, 5 x 6 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 D G4 Text added for spacing 6D 5D P0093-01 Absolute Maximum Ratings TA = 25°C VDS Drain-to-source voltage VGS Gate-to-source voltage Continuous drain current (package limited), TC = 25°C ID Continuous drain current (silicon limited), TC = 25°C Continuous drain current, TA = 25°C(1) IDM Pulsed drain cu...