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CSD18542KCS 60 V N-Channel NexFET™ Power MOSFET
CSD18542KCS
SLPS557 – JUNE 2015
1 Features
•1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • TO-220 Plastic Package
2 Applications
• DC-DC Conversion • Secondary Side Synchronous Rectifier • Motor Control
3 Description
This 60 V, 3.3 mΩ, TO-220 NexFET™ power MOSFET is.
Power MOSFETs
Product Folder
Sample & Buy
Technical Documents
Tools & Software
Support & Community
CSD18542KCS 60 V N-Channel NexFET™ Power MOSFET
CSD18542KCS
SLPS557 – JUNE 2015
1 Features
•1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • TO-220 Plastic Package
2 Applications
• DC-DC Conversion • Secondary Side Synchronous Rectifier • Motor Control
3 Description
This 60 V, 3.3 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Drain (Pin 2)
Gate (Pin 1)
Source (Pin 3)
Product Summary
TA = 25°C
VDS
Drain-to-source voltage
Qg
Gate charge total (10 V)
Qgd
Gate charge gate-to-drain
RDS(on) Drain-to-source on-resistance
VGS(th) Threshold voltage
TYPICAL VALUE
60
44
6.9
VGS = 4.5 V 4.0
VGS = 10 V
3.3
1.8
UNIT V nC nC mΩ mΩ V
DEVICE CSD18542KCS
Ordering Information(1)
QTY MEDIA
PACKAGE
50
Tube
TO-220 Plastic Package
SHIP Tube
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C VDS Drain-to-source voltage VGS Gate-to-source voltage
Continuous drain current (package limited)
VALUE 60 ±20 200
UNIT V V
ID
Continuous drain current (silicon limited), TC = 25°C
170
A
Continuous drain current (silicon limited), TC = 100°C
120
IDM Pulsed drain current (1)
400
A
PD Power dissipation
200
W
TJ, Operating junction, Tstg Storage temperature
–55 to 1.