CSD18542KTT

Product Folder Order Now Technical Documents Tools & Software Support & Community CSD18542KTT SLPS590A – MARCH 2016 – REVISED MARCH 2017 CSD18542KTT 60-V N-Channel NexFET™ Power MOSFET 1 Features 1 Ultra-Low Qg and Qgd Low-Thermal Resistance Avalanche Rated Logic Level Lead-Free Terminal Plating RoHS Compliant Halogen Free D2PAK Plastic Package 2 Applications DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 60 44 6.9 VGS = 4.5 V 4.0 VGS = 10 V 3.3 1.8 UNIT V nC nC mΩ V DEVICE CSD18542KTT CSD18542KTTT Device Information(1) QTY MEDIA PACKAGE 500 13-Inch Reel 50 D2PAK Plastic Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. 3 Description This 60-V, 3.3-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Drain (Pin 2) Gate (Pin 1) Source (Pin 3) Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limited) VALUE 60 ±20 200 UNIT V V Continuous Drain Current (Silicon Limited), ID TC = 25°C 170 A Continuous Drain Current (Silicon Limited), TC = 100°C 120 IDM Pulsed Drain Current(1) 400 A PD Power Dissipation 250 W T...