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CSD19503KCS
SLPS479A – DECEMBE...
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CSD19503KCS
SLPS479A – DECEMBER 2013 – REVISED AUGUST 2014
CSD19503KCS 80-V N-Channel NexFET™ Power
MOSFET
1 Features
1 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package
2 Applications
Secondary Side Synchronous Rectifier Motor Control
3 Description
This 80 V, 7.6 mΩ, TO-220 NexFET™ power
MOSFET is designed to minimize losses in power conversion applications.
.
Drain (Pin 2)
Gate (Pin 1)
Source (Pin 3)
.
Product Summary
TA = 25°C VDS Drain-to-Source
Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain
RDS(on) Drain-to-Source On-Resistance
VGS(th) Threshold
Voltage
TYPICAL VALUE
80
28
5.4
VGS = 6 V VGS = 10 V
2.8
8.8 7.6
UNIT V nC nC mΩ mΩ V
Device CSD19503KCS
Ordering Information(1)
Package
Media Qty
TO-220 Plastic Package
Tube
50
Ship Tube
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C VDS Drain-to-Source
Voltage VGS Gate-to-Source
Voltage
Continuous Drain Current (Package limited)
VALUE 80 ±20 100
UNIT V V
Continuous Drain Current (Silicon limited), ID TC = 25°C
94
Continuous Drain Current (Silicon limited), TC = 100°C
IDM Pulsed Drain Current (1)
66 247
PD Power Dissipation
188
TJ, Operating Junction and Tstg Storage Temperature Range
–55 to 175
EAS
Avalanche ...