CSD19533KCS

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19533KCS SLPS482B – DECEMBER 2013 – REVISED JANUARY 2015 CSD19533KCS, 100 V N-Channel NexFET™ Power MOSFET 1 Features 1 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package 2 Applications Secondary Side Synchronous Rectifier Motor Control 3 Description This 100 V, 8.7 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Drain (Pin 2) Gate (Pin 1) Source (Pin 3) Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 100 27 5.4 VGS = 6 V VGS = 10 V 2.8 9.7 8.7 UNIT V nC nC mΩ mΩ V Device CSD19533KCS Ordering Information(1) Package Media Qty TO-220 Plastic Package Tube 50 Ship Tube (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) VALUE 100 ±20 100 UNIT V V Continuous Drain Current (Silicon limited), ID TC = 25°C 86 Continuous Drain Current (Silicon limited), TC = 100°C IDM Pulsed Drain Current (1) 61 207 PD Power Dissipation 188 TJ, Operating Junction and Tstg Storage Temperature Range –55 to 175 EAS Avalanche...