CSD19533Q5A

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19533Q5A SLPS486A – DECEMBER 2013 – REVISED MAY 2014 CSD19533Q5A 100 V N-Channel NexFET™ Power MOSFET 1 Features 1 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb-Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 100 27 4.9 VGS = 6 V VGS = 10 V 2.8 8.7 7.8 UNIT V nC nC mΩ mΩ V 2 Applications Primary Side Telecom Secondary Side Synchronous Rectifier Motor Control 3 Description This 100 V, 7.8 mΩ, SON 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 G4 D 6D 5D P0093-01 Device CSD19533Q5A CSD19533Q5AT . Ordering Information(1) Media Qty Package 13-Inch Reel 2500 SON 5 x 6 mm 7-Inch Reel 250 Plastic Package Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) VALUE 100 ±20 100 UNIT V V ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current, TA = 25 °C(1) IDM Pulsed Drain Current, TA = 25 °C(2) Power Dissipation(1) PD Powe...