CSD19536KCS

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19536KCS SLPS485B – JANUARY 2014 – REVISED OCTOBER 2014 CSD19536KCS 100 V N-Channel NexFET™ Power MOSFET 1 Features 1 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb-Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 100 118 17 VGS = 6 V VGS = 10 V 2.5 2.5 2.3 UNIT V nC nC mΩ mΩ V 2 Applications Secondary Side Synchronous Rectifier Motor Control Device CSD19536KCS Ordering Information Package Media Qty TO-220 Plastic Package Tube 50 Ship Tube 3 Description This 100 V, 2.3 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. SPACE Drain (Pin 2) Gate (Pin 1) Source (Pin 3) Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) VALUE 100 ±20 150 UNIT V V Continuous Drain Current (Silicon limited), ID TC = 25°C 259 Continuous Drain Current (Silicon limited), TC = 100°C IDM Pulsed Drain Current (1) 183 400 PD Power Dissipation 375 TJ, Operating Junction and Tstg Storage Temperature Range –55 to 175 EAS Avalanche Energy, single pulse ID = 127 A, L = 0.1 mH, RG = 25 Ω 806 A A W °C mJ (1) Max ...