CSD19537Q3
SLPS549B – AUGUST 2015 – REVISED NOVEMBER 2022
CSD19537Q3 100-V N-Channel NexFET™ Power MOSFET
RDS(on) - On-...
CSD19537Q3
SLPS549B – AUGUST 2015 – REVISED NOVEMBER 2022
CSD19537Q3 100-V N-Channel NexFET™ Power
MOSFET
RDS(on) - On-State Resistance (m:) VGS - Gate-to-Source
Voltage (V)
1 Features
Ultra-low Qg and Qgd Low thermal resistance Avalanche rated Lead free terminal plating RoHS compliant Halogen free SON 3.3-mm × 3.3-mm plastic package
2 Applications
Primary Side Isolated Converters Motor Control
3 Description
This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power
MOSFET is designed to minimize losses in power conversion applications.
S1
8D
S2
7D
S3 G4
D
Figure 3-1. Top View
6D
5D
P0095-01
40
TC = 25° C, ID = 10 A
35
TC = 125° C, ID = 10 A
30
25
20
15
10
5
0
0 2 4 6 8 10 12 14 16 18 20
VGS - Gate-To-Source
Voltage (V)
D007
RDS(on) vs VGS
Product Summary
TA = 25°C
TYPICAL VALUE
VDS
Drain-to-Source
Voltage
100
Qg
Gate Charge Total (10 V)
16
Qgd
Gate Charge Gate-to-Drain
2.9
RDS(on) Drain-to-Source On-Resistance
VGS = 6 V VGS = 10 V
13.8 12.1
VGS(th) Threshold
Voltage
3
UNIT V nC nC mΩ mΩ V
DEVICE CSD19537Q3 CSD19537Q3T
. Ordering Information(1)
MEDIA
QTY
PACKAGE
SHIP
13-Inch Reel 13-Inch Reel
2500 SON 3.3- x 3.3-mm Tape and
250 Plastic Package
Reel
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C VDS Drain-to-Source
Voltage VGS Gate-to-Source
Voltage
Continuous Drain Current (Package Limited)
VALUE 100 ±20 50
ID
Continuous Drain Cu...
