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CSD23280F3 Datasheet

Part Number CSD23280F3
Manufacturers Texas Instruments
Logo Texas Instruments
Description P-Channel Power MOSFET
Datasheet CSD23280F3 DatasheetCSD23280F3 Datasheet (PDF)

Product Folder Order Now Technical Documents Tools & Software Support & Community CSD23280F3 SLPS601A – APRIL 2016 – REVISED AUGUST 2017 CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET 1 Features •1 Low On-Resistance • Ultra-Low Qg and Qgd • High-Operating Drain Current • Ultra-Small Footprint – 0.73 mm × 0.64 mm • Ultra-Low Profile – 0.35-mm Max Height • Integrated ESD Protection Diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and Halogen Free • RoHS Compliant 2 Applications • Optimized fo.

  CSD23280F3   CSD23280F3






Part Number CSD23280F3T
Manufacturers Texas Instruments
Logo Texas Instruments
Description P-Channel Power MOSFET
Datasheet CSD23280F3 DatasheetCSD23280F3T Datasheet (PDF)

Product Folder Order Now Technical Documents Tools & Software Support & Community CSD23280F3 SLPS601A – APRIL 2016 – REVISED AUGUST 2017 CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET 1 Features •1 Low On-Resistance • Ultra-Low Qg and Qgd • High-Operating Drain Current • Ultra-Small Footprint – 0.73 mm × 0.64 mm • Ultra-Low Profile – 0.35-mm Max Height • Integrated ESD Protection Diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and Halogen Free • RoHS Compliant 2 Applications • Optimized fo.

  CSD23280F3   CSD23280F3







P-Channel Power MOSFET

Product Folder Order Now Technical Documents Tools & Software Support & Community CSD23280F3 SLPS601A – APRIL 2016 – REVISED AUGUST 2017 CSD23280F3 –12-V P-Channel FemtoFET™ MOSFET 1 Features •1 Low On-Resistance • Ultra-Low Qg and Qgd • High-Operating Drain Current • Ultra-Small Footprint – 0.73 mm × 0.64 mm • Ultra-Low Profile – 0.35-mm Max Height • Integrated ESD Protection Diode – Rated > 4-kV HBM – Rated > 2-kV CDM • Lead and Halogen Free • RoHS Compliant 2 Applications • Optimized for Load Switch Applications • Optimized for General Purpose Switching Applications • Battery Applications • Handheld and Mobile Applications 3 Description This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE –12 0.95 0.068 VGS = –1.5 V 230 VGS = –1.8 V 180 VGS = –2.5 V 129 VGS = –4.5 V 97 –0.65 UNIT V nC nC mΩ V DEVICE CSD23280F3 CSD23280F3T Device Information(1) QTY MEDIA PACKAGE 3000 250 7-Inch Reel Femto 0.73-mm × 0.64-mm Land Grid Array (LGA) SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Ma.


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