CSD23382F4T

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD23382F4 SLPS453C – MAY 2014 – REVISED OCTOBER 2014 CSD23382F4 12 V P-Channel FemtoFET™ MOSFET 1 Features 1 Low On-Resistance Ultra-Low Qg and Qgd Ultra-Small Footprint (0402 Case Size) – 1.0 mm × 0.6 mm Low Profile – 0.35 mm Max Height Integrated ESD Protection Diode – Rated >2 kV HBM – Rated >2 kV CDM Pb Terminal Plating Halogen Free RoHS Compliant 2 Applications Optimized for Load Switch Applications Optimized for General Purpose Switching Applications Battery Applications Handheld and Mobile Applications 3 Description This 66 mΩ, 12 V P-channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size. . Typical Part Dimensions 0.35 mm Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE –12 1.04 0.15 VGS = –1.8 V 149 VGS = –2.5 V 90 VGS = –4.5 V 66 –0.8 UNIT V nC nC mΩ V Device CSD23382F4 CSD23382F4T Ordering Information(1) Qty Media Package 3000 7-Inch Reel Femto (0402) 1.0 mm × 0.6 mm 250 7-Inch Reel Land Grid Array (LGA) Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the da...