CSD655

www.DataSheet4U.com Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSD655 (9AW) TO-92 BCE Marking : As Below ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL VALUE VCBO 30 Collector -Base Voltage VCEO 15 Collector -Emitter Voltage VEBO 5.0 Emitter Base Voltage IC 700 Collector Current ICP 1.0 Peak PC 500 Collector Power Dissipation Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN TYP VCBO IC=10uA, IE=0 30 Collector -Base Voltage VCEO IC=10mA, IB=0 15 Collector -Emitter Voltage VEBO IE=10uA, IC=0 5.0 Emitter Base Voltage ICBO VCB=20V, IE=0 Collector Cut off Current VBE(on) IC=150mA,VCE=1V Base Emitter Voltage VCE(Sat) IC=500mA,IB=50mA Collector Emitter Saturation Voltage hFE IC=150mA,VCE=1V 250 DC Current Gain Dynamic Characteristics ft VCE=1V,IC=150mA, 250 Transition Frequency Cob VCB=10V, IE=0 Collector Out-put Capacitance f=1MHz Cib VEB=0.5V, IC=0 In-put Capacitance f=1MHz hFE CLASSIFICATION D : 250-500; E : 300-800; F : 600-1200 MARKING CD 655 E UNIT V V V mA A mW deg C www.DataSheet4U.com MAX 1.0 1.0 0.50 1200 30 120 UNIT V V V uA V V MHz pF pF Continental Device India Limited Data Sheet Page 1 of 3 www.DataSheet4U www.DataSheet4U.com 4U.com www.DataSheet4U.c...