CSD667

www.DataSheet4U.com Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100 NPN SILICON EPITAXIAL TRANSISTORS CSD667 CSD667A TO-237 BCE Low Frequency Power Amplifier Complementary CSB647/A ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C) DESCRIPTION SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter Base Voltage IC Collector Current IC Peak PC Collector Power Dissipation Tj, Tstg Operating And Storage Junction Temperature Range CSD667 120 80 5.0 1.0 2.0 0.9 -55 to +150 CSD667A 120 100 5.0 1.0 2.0 0.9 -55 to +150 UNIT V V V A A W deg C ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION CSD667 CSD667A VCBO IC=10uA, IE=0 >120 >120 Collector -Base Voltage VCEO IC=1mA, IB=0 >80 >100 Collector -Emitter Voltage VEBO IE=10uA, IC=0 >5.0 >5.0 Emitter Base Voltage ICBO VCB=100V, IE=0 <10 <10 Collector Cut off Current hFE* IC=150mA,VCE=5V** 60-320 60-200 DC Current Gain IC=500mA,VCE=5V** >30 >30 VCE(Sat) IC=500mA,IB=50mA** <1.0 <1.0 Collector Emitter Saturation Voltage VBE IC=150mA,VCE=5V** <1.5 <1.5 Base to Emitter Voltage Dynamic Characteristics ft IC=150mA,VCE=5V** typ140 typ140 Gain Bandwidth Product Cob VCB=10V, f=1MHz typ12 typ12 Output Capacitance CLASSIFICATION hFE* hFE* **Pulse Test B 60-120 60-120 C 100-200 100-200 D 160-320 - www.DataSheet4U.com UNIT V V V uA V V MHz pF CSD667 CSD667A Continental Device I...