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CT20VML-8 Datasheet
Part Number
CT20VML-8
Manufacturers
Mitsubishi Electric Semiconductor
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Description
IGBT
Datasheet
CT20VML-8 Datasheet (PDF)
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VML-8 STROBE FLASHER USE CT20VML-8 OUTLINE DRAWING 1.5MAX. r 10.5MAX. Dimensions in mm 1.3 1 13.2 ± 0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 0.5 2.5 2.5 0.5 wr q q GATE w COLLECTOR e EMITTER r COLLECTOR e ¡VCES 400V ¡ICM .... 130A TO-220C APPLICATION Strobe Flasher. MAXIMUM RATINGS .
IGBT
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VML-8 STROBE FLASHER USE CT20VML-8 OUTLINE DRAWING 1.5MAX. r 10.5MAX. Dimensions in mm 1.3 1 13.2 ± 0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 0.5 2.5 2.5 0.5 wr q q GATE w COLLECTOR e EMITTER r COLLECTOR e ¡VCES 400V ¡ICM .... 130A TO-220C APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol VCES VGES VGEM ICM Tj Tstg (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature Conditions VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 10s See figure 1 2.6 ± 0.4 q w e Ratings 400 ±15 ±16 130 –40 ~ +150 –40 ~ +150 4.5 Unit V V V A °C °C ELECTRICAL CHARACTERISTICS Symbol V(BR)CES ICES IGES VGE(th) Parameter (Tj = 25°C) Test conditions IC = 1mA, VGE = 0V VCE = 400V, VGE = 0V VGE = ±16V, VCE = 0V VCE = 10V, IC = 1mA Limits Min. 450 — — 0.5 Typ. — — — — Max. — 10 ±0.1 2.0 Unit V µA µA V Feb.1999 Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VML-8 STROBE FLASHER USE PERFORMANCE CURVES PULSE COLLECTOR CURRENT ICM (A) MAXIMUM PULSE COLLECTOR CURRENT 160 CM = 400µF 120 TC < = 50°C 80 40 TC < = 70°C 0 0 4 8 12 16 GATE-.
2005-03-24 :
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