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CT2300-R3 MOSFET Datasheet PDF

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part Number CT2300-R3
Description N-Channel MOSFET
Feature CT2300-R3 N-Channel Enhancement MOSFET Features
• Drain-Source Breakdown Vol tage VDSS 20 V
• Drain-Source On-Resi stance RDS(ON) 22mΩ, at VGS= 4.
5V, ID S= 4.
0A RDS(ON) 27mΩ, at VGS= 2.
5V, I DS= 3.
0A ℃
• Continuous Drain Curren t at TA=25 ID = 4.
0A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free Applications
• Power Management
• Lithium Ion B attery Description The CT2300-R3 uses high performance Trench Technology to p rovide excellent RDS(ON) and low gate c harge which is suitable for most of the synchronous buck converter application s .
Package Outline Drain Gate .
Manufacture CT Micro
Datasheet
Download CT2300-R3 Datasheet

CT2300-R3

 

 

 


 

 

 

Part Number CT2300-R3
Description N-Channel MOSFET
Feature CT2300-R3 N-Channel Enhancement MOSFET Features
• Drain-Source Breakdown Vol tage VDSS 20 V
• Drain-Source On-Resi stance RDS(ON) 22mΩ, at VGS= 4.
5V, ID S= 4.
0A RDS(ON) 27mΩ, at VGS= 2.
5V, I DS= 3.
0A ℃
• Continuous Drain Curren t at TA=25 ID = 4.
0A
• Advanced high cell density Trench Technology
• RoHS Compliance & Halogen Free Applications
• Power Management
• Lithium Ion B attery Description The CT2300-R3 uses high performance Trench Technology to p rovide excellent RDS(ON) and low gate c harge which is suitable for most of the synchronous buck converter application s .
Package Outline Drain Gate .
Manufacture CT Micro
Datasheet
Download CT2300-R3 Datasheet

CT2300-R3

 

 

 

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