CT2301-R3 P-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS - 20 V • Drain-Source On-Resistance
RDS(ON) 85mΩ, at VGS= - 4.5V, IDS= - 3.0A RDS(ON) 100mΩ, at VGS= - 2.5V, IDS= - 2.0A
℃• Continuous Drain Current at TA=25 ID = - 3.0A
• Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free
Applications
• Power Management • Portable Equipment • Battery Powered System • Load Switch
Description
The CT2301-R3 uses high performance Trench Technology to p.
P-Channel MOSFET
CT2301-R3 P-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS - 20 V • Drain-Source On-Resistance
RDS(ON) 85mΩ, at VGS= - 4.5V, IDS= - 3.0A RDS(ON) 100mΩ, at VGS= - 2.5V, IDS= - 2.0A
℃• Continuous Drain Current at TA=25 ID = - 3.0A
• Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free
Applications
• Power Management • Portable Equipment • Battery Powered System • Load Switch
Description
The CT2301-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications .
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro Proprietary & Confidential
Page 1
Rev 4 Aug, 2015
CT2301-R3 P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
℃ID Continuous Drain Current @TA=25
IDM Pulsed Drain Current
PD Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance Junction-Ambient (t=10s)
Test Conditions
Ratings -20 ±12 -3.0 -12 1.25
-55 to 150 -55 to 150
Units V V A A W oC oC
Notes
1 1 2
Min Typ Max Units Notes
-
200
-
oC /W
1,4
CT Micro Proprietary & Confidential
Page 2
Rev 4 Aug, 2015
CT2301-R3 P-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characterist.