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CT2301-R3 Datasheet

Part Number CT2301-R3
Manufacturers CT Micro
Logo CT Micro
Description P-Channel MOSFET
Datasheet CT2301-R3 DatasheetCT2301-R3 Datasheet (PDF)

CT2301-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 20 V • Drain-Source On-Resistance RDS(ON) 85mΩ, at VGS= - 4.5V, IDS= - 3.0A RDS(ON) 100mΩ, at VGS= - 2.5V, IDS= - 2.0A ℃• Continuous Drain Current at TA=25 ID = - 3.0A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • Portable Equipment • Battery Powered System • Load Switch Description The CT2301-R3 uses high performance Trench Technology to p.

  CT2301-R3   CT2301-R3






P-Channel MOSFET

CT2301-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS - 20 V • Drain-Source On-Resistance RDS(ON) 85mΩ, at VGS= - 4.5V, IDS= - 3.0A RDS(ON) 100mΩ, at VGS= - 2.5V, IDS= - 2.0A ℃• Continuous Drain Current at TA=25 ID = - 3.0A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • Portable Equipment • Battery Powered System • Load Switch Description The CT2301-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 4 Aug, 2015 CT2301-R3 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current PD Total Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient (t=10s) Test Conditions Ratings -20 ±12 -3.0 -12 1.25 -55 to 150 -55 to 150 Units V V A A W oC oC Notes 1 1 2 Min Typ Max Units Notes - 200 - oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 4 Aug, 2015 CT2301-R3 P-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unless otherwise specified) Static Characterist.


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