CT2306-R3 N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 30 V • Drain-Source On-Resistance
• RDS(ON) 25mΩ, at VGS= 10V, ID=4.0A RDS(ON) 36mΩ, at VGS= 4.5V, ID= 3.5A
℃• Continuous Drain Current at TA=25 ID = 4.7A
• Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free
Description
The CT2306-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter a.
N-Channel MOSFET
CT2306-R3 N-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS 30 V • Drain-Source On-Resistance
• RDS(ON) 25mΩ, at VGS= 10V, ID=4.0A RDS(ON) 36mΩ, at VGS= 4.5V, ID= 3.5A
℃• Continuous Drain Current at TA=25 ID = 4.7A
• Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free
Description
The CT2306-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications.
Applications
• Power Management • DC-DC Converter • Load Switch
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro Proprietary & Confidential
Page 1
Rev 2 Jun, 2015
CT2306-R3 N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
℃ID Continuous Drain Current @TA=25
IDM Pulsed Drain Current
℃PD Total Power Dissipation @TA=25
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA
Thermal Resistance Junction-Ambient
Test Conditions
Test Conditions 30 ±20 4.7 20 1.3
-55 to 150 -55 to 150
Min Notes V V A1 A1 W2 °C °C
Min Typ Max Units Notes -- 125 -- oC /W 1,4
CT Micro Proprietary & Confidential
Page 2
Rev 2 Jun, 2015
CT2306-R3 N-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
BVDSS Drain-Source Break.