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CT2323-R3
P-Channel MOSFET
Description
CT2323-R3 P-Channel Enhancement
MOSFET
Features Drain-Source Breakdown
Voltage
VDSS - 20 V Drain-Source On-Resistance RDS(ON) 30mΩ, at VGS= - 4.5V, IDS= - 4.7A RDS(ON) 35mΩ, at VGS= - 2.5V, IDS= - 4.1A RDS(ON) 40mΩ, at VGS= - 1.8V, IDS= - 2.0A ℃ Continuous Drain Current at TA=25 ID = - 4.2A Advanced high cell density Trench Technology RoHS Complian...
CT Micro
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