MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30VM-8
STROBE FLASHER USE
CT30VM-8
OUTLINE DRAWING
1.5MAX. r 10.5MAX.
...
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30VM-8
STROBE FLASHER USE
CT30VM-8
OUTLINE DRAWING
1.5MAX. r 10.5MAX.
Dimensions in mm
1.3
1 13.2 ± 0.5
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
0.5 2.5 2.5
0.5
wr
q
¡VCES ................................................................................ 400V ¡ICM .................................................................................... 180A
q GATE w COLLECTOR e EMITTER r COLLECTOR e
TO-220C
APPLICATION Strobe Flasher.
MAXIMUM RATINGS
Symbol VCES VGES VGEM ICM Tj Tstg
(Tc = 25°C)
Parameter Collector-emitter
voltage Gate-emitter
voltage Peak gate-emitter
voltage Collector current (Pulsed) Junction temperature Storage temperature
Conditions VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.5s See figure 1
2.6 ± 0.4
q
w
e
Ratings 400 ±30 ±40 180 –40 ~ +150 –40 ~ +150
4.5
Unit V V V A °C °C
ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES ICES IGES VGE(th) Parameter
(Tj = 25°C)
Test conditions IC = 1mA, VGE = 0V VCE = 400V, VGE = 0V VGE = ±40V, VCE = 0V VCE = 10V, IC = 1mA
Limits Min. 450 — — — Typ. — — — — Max. — 10 ±0.1 7.0
Unit V µA µA V
Feb.1999
Collector-emitter breakdown
voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold
voltage
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30VM-8
STROBE FLASHER USE
PERFORMANCE CURVES
MAXIMUM PULSE COLLECTOR CURRENT 200 CM = 1000µF 160
MAIN CAPACITOR CM (µF)
PULSE COLLECTOR CURRENT ICM (A)
MAXIMUM PULSE COLLECTOR CURRENT 2000...
