DatasheetsPDF.com

CTH1606NS-T52 MOSFET Datasheet PDF

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part Number CTH1606NS-T52
Description N-Channel MOSFET
Feature CTH1606NS-T52 N-Channel Enhancement MOSF ET Features  Drain-Source Breakdown Voltage VDSS 60V  Drain-Source On-R esistance RDS(ON) 52m, at VGS= 10V, ID= 15A RDS(ON) 70m, at VGS= 4.
5V, I D= 10A  Continuous Drain Current at TC=25℃ID =16A  Advanced high cell density Trench Technology  RoHS Comp liance & Halogen Free Description The CTH1606NS-T52 is the N-Channel logic en hancement mode power field effect trans istors are produced using high cell den sity, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suit .
Manufacture CT Micro
Datasheet
Download CTH1606NS-T52 Datasheet

CTH1606NS-T52

 

 

 


 

 

 

Part Number CTH1606NS-T52
Description N-Channel MOSFET
Feature CTH1606NS-T52 N-Channel Enhancement MOSF ET Features  Drain-Source Breakdown Voltage VDSS 60V  Drain-Source On-R esistance RDS(ON) 52m, at VGS= 10V, ID= 15A RDS(ON) 70m, at VGS= 4.
5V, I D= 10A  Continuous Drain Current at TC=25℃ID =16A  Advanced high cell density Trench Technology  RoHS Comp liance & Halogen Free Description The CTH1606NS-T52 is the N-Channel logic en hancement mode power field effect trans istors are produced using high cell den sity, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suit .
Manufacture CT Micro
Datasheet
Download CTH1606NS-T52 Datasheet

CTH1606NS-T52

 

 

 

@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)