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CTH1804PS-T52 Datasheet

Part Number CTH1804PS-T52
Manufacturers CT Micro
Logo CT Micro
Description P-Channel MOSFET
Datasheet CTH1804PS-T52 DatasheetCTH1804PS-T52 Datasheet (PDF)

CTH1804PS-T52 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS-40V  Drain-Source On-Resistance RDS(ON) 35m, at VGS= -10V, ID= -12A RDS(ON) 57m, at VGS= -4.5V, ID= -6A  Continuous Drain Current at TC=25℃ID =-18.6A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTH1804PS-T52 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high d.

  CTH1804PS-T52   CTH1804PS-T52






P-Channel MOSFET

CTH1804PS-T52 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS-40V  Drain-Source On-Resistance RDS(ON) 35m, at VGS= -10V, ID= -12A RDS(ON) 57m, at VGS= -4.5V, ID= -6A  Continuous Drain Current at TC=25℃ID =-18.6A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTH1804PS-T52 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Applications  Load Switch  DC/DC Converter  LCD Display inverter Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Jun, 2015 CTH1804PS-T52 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current @TC=25℃ IDM Pulsed Drain Current PD Total Power Dissipation @TC=25℃ TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJC Thermal Resistance Junction-Case Test Conditions Test Conditions -40 ±25 -18.6 -75 25 -55 to 150 -55 to 150 Min Note Vs V A1 A1 W2 °C °C Min Typ Max Units Notes -- -- 5 oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 3 Jun, 2015 CTH1804PS-T52 P-Channel Enhancement MOSFET Electrical Characteristics TC = 25°C (unless otherwise specified).


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