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CTH2503NS-T52 Datasheet

Part Number CTH2503NS-T52
Manufacturers CT Micro
Logo CT Micro
Description N-Channel MOSFET
Datasheet CTH2503NS-T52 DatasheetCTH2503NS-T52 Datasheet (PDF)

CTH2503NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 30V  Drain-Source On-Resistance RDS(ON) 21m, at VGS= 10V, ID= 10A RDS(ON) 32m, at VGS= 4.5V, ID= 7A  Continuous Drain Current at TC=25℃, ID =25A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTH2503NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high densit.

  CTH2503NS-T52   CTH2503NS-T52






N-Channel MOSFET

CTH2503NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 30V  Drain-Source On-Resistance RDS(ON) 21m, at VGS= 10V, ID= 10A RDS(ON) 32m, at VGS= 4.5V, ID= 7A  Continuous Drain Current at TC=25℃, ID =25A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTH2503NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. Applications  Power Management  Portable Equipment  DC/DC Converter  Load Switch Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Jun, 2015 CTH2503NS-T52 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current @TC=25℃ IDM Pulsed Drain Current PD Total Power Dissipation @TC=25℃ TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJC Thermal Resistance Junction-Case Test Conditions Test Conditions 30 ±20 25 100 28 -55 to 150 -55 to 150 Min Note Vs V A1 A1 W2 °C °C Min Typ Max Units Notes -- -- 5 oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 3 Jun, 2015 CTH2503NS-T52 N-Channel Enhancement .


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