CTH2503NS-T52 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 30V Drain-Source On-Resistance
RDS(ON) 21m, at VGS= 10V, ID= 10A RDS(ON) 32m, at VGS= 4.5V, ID= 7A
Continuous Drain Current at TC=25℃, ID =25A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CTH2503NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high densit.
N-Channel MOSFET
CTH2503NS-T52 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 30V Drain-Source On-Resistance
RDS(ON) 21m, at VGS= 10V, ID= 10A RDS(ON) 32m, at VGS= 4.5V, ID= 7A
Continuous Drain Current at TC=25℃, ID =25A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CTH2503NS-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application.
Applications
Power Management Portable Equipment DC/DC Converter
Load Switch
Package Outline
Schematic
Drain
Gate
Source
Drain Gate
Source
CT Micro Proprietary & Confidential
Page 1
Rev 3 Jun, 2015
CTH2503NS-T52 N-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current @TC=25℃
IDM Pulsed Drain Current
PD Total Power Dissipation @TC=25℃
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJC
Thermal Resistance Junction-Case
Test Conditions
Test Conditions 30 ±20 25 100 28
-55 to 150 -55 to 150
Min Note Vs V A1 A1 W2 °C °C
Min Typ Max Units Notes -- -- 5 oC /W 1,4
CT Micro Proprietary & Confidential
Page 2
Rev 3 Jun, 2015
CTH2503NS-T52 N-Channel Enhancement .