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CTH3903NS-T52 MOSFET Datasheet PDF

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part Number CTH3903NS-T52
Description N-Channel MOSFET
Feature CTH3903NS-T52 N-Channel Enhancement MOSF ET Features  Drain-Source Breakdown Voltage VDSS 30V  Drain-Source On-R esistance RDS(ON) 11m, at VGS= 10V, ID= 15A RDS(ON) 16m, at VGS= 4.
5V, I D= 15A  Continuous Drain Current at TC=25℃ID =39A  Advanced high cell density Trench Technology  RoHS Comp liance & Halogen Free Description The CTH3903NS-T52 is the N-Channel logic en hancement mode power field effect trans istors are produced using high cell den sity, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suit .
Manufacture CT Micro
Datasheet
Download CTH3903NS-T52 Datasheet

CTH3903NS-T52

 

 

 


 

 

 

Part Number CTH3903NS-T52
Description N-Channel MOSFET
Feature CTH3903NS-T52 N-Channel Enhancement MOSF ET Features  Drain-Source Breakdown Voltage VDSS 30V  Drain-Source On-R esistance RDS(ON) 11m, at VGS= 10V, ID= 15A RDS(ON) 16m, at VGS= 4.
5V, I D= 15A  Continuous Drain Current at TC=25℃ID =39A  Advanced high cell density Trench Technology  RoHS Comp liance & Halogen Free Description The CTH3903NS-T52 is the N-Channel logic en hancement mode power field effect trans istors are produced using high cell den sity, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suit .
Manufacture CT Micro
Datasheet
Download CTH3903NS-T52 Datasheet

CTH3903NS-T52

 

 

 

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