CTH4106NS-T52

CTH4106NS-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS = 60V  Drain-Source On-Resistance RDS(ON) 16m, at VGS= 10V, ID= 50A  Continuous Drain Current at TC=25℃ID = 41A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTH4106NS –T52 uses high performance Trench Technology to provide excellent RDS(ON)and low gate charge which is suitable for most of the synchronous buck converter applications . Applications  Notebook  High side switching  Power Management Package Outline Drain Gate Source Schematic Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CTH4106NS-T52 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current @TC=25℃ IDM Pulsed Drain Current PD Total Power Dissipation @TC=25℃ TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJC Thermal Resistance Junction-Case Test Conditions Steady State Test Conditions 60 ±20 41 160 59.5 -55 to 150 -55 to 150 Min Notes V V A1 A1 W2 °C °C Min Typ Max Units Notes -- -- 2.1 oC /W 1,3 CT Micro Proprietary & Confidential Page 2 Rev 2 Jun, 2015 CTH4106NS-T52 N-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unless otherwise specified) Static Characteristics Symbol Parameters BVDSS Drain-Source Breakdown Voltage...